In a new joint study with the the Department of Microtechnology and Nanoscience at Chalmers University of Technology in Gothenburg, SweGaN explored QuanFINE epiwafer performance, based on GaN high-electron-mobility transistor (HEMT) technology at Chalmers (Chen et al, IEEE Electron Device Letters, DOI: 10.1109/LED.2020.2988074).Ĭollaborating with scientists at the university, the team performed a new benchmark comparing the conventional 1.8µm-thick Fe-doped GaN buffer epi-structure to SweGaN’s ‘buffer-free’ QuanFINE GaN HEMT heterostructures for microwave applications. SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for RF and power electronics devices, has announced a new benchmark for GaN high-frequency devices based on its QuanFINE material, reckoning that the demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, and military markets. SweGaN’s buffer-free GaN-on-SiC HEMT epi demonstrates competitive microwave performance and device efficiency

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